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Aluminum Film on Silicon Wafer, Al: 300 nm, Si(100) P-type R:1-20 ohm.cm


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Item Number: Al(3um)on SiBa101D05C1(1-20)

Aluminum Metallic Film

  • Film Deposition by DC Sputtering 
  • Aluminum Thickness: 300 nm
  • Film Resistivity: <= 4 Ohm-cm
  • Film Crystallinity:  Weak (111) - oriented polycrystals
  • RMS(Rq): ~10 nm

Silicon Wafer Specifications:

  • Conductive type:        Si   P- type,B-doped 
  • Resistivity:                  1-20ohm-cm
  • Size:                          4" diameter +/- 0.5 mm  x 0.525 +/- 0.025 mm thick
  • Orientation:                (100) +/- 0.5o
  • Polish:                        One  side  polished
  • Surface roughness:     Prime
  • Packing:                      Vacuum packed on a 4" single wafer carrier
Please click here to find XRD, SEM & AFM data



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