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Aluminum Film on Silicom Wafer , 3 microns / 4" -- Al-Si-100-3um ,Si(100) N-type R:<0.005 ohm.cm


In stock
Item Number: Al(3um) on SiAsa101D0525C1(0.005)

Aluminum Metallic Film

  • Film coated by E-beam evaporation under vacuum below 1xE-6 torr
  • evaporation rate: 0.2 nanometer per second
  • Aluminum Thickness: 3 microns
  • Film Crystallinity:  Weak (111) - oriented polycrystals

Silicon Wafer Specifications:

  • Conductive type:         Si  N- type As-doped
  • Resistivity:                  <0.005  ohm-cm
  • Size:                          4" diameter x 0.525 mm th
  • Orientation:                (100) +/- 0.5o
  • Polish:                        One  sides  polished
  • Surface roughness:     Prime
  • Packing:                      Vacuum packed on a 4" single wafer carrier
  • Optional:  you may need tool below to handle the wafer ( click picture to order )

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