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Aluminum Film on Silicon Wafer , 3 microns / 4" -- Al-Si-100-3um ,Si(100) N-type R:1-10 ohm.cm


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Item Number: Al(3um) on SiPa101D0525C1(1-10)

Aluminum Metallic Film

  • Film-coated by E-beam evaporation under vacuum below 10-6 torr
  • evaporation rate: 0.2 nanometer per second
  • Aluminum Thickness: 3 microns
  • Film Resistivity: 2.65  micro-ohm-cm
  • Film Crystallinity:  Weak (111) - oriented polycrystals
  • Roughness, RMS:  4.87 nm and  < 10 nm

Silicon Wafer Specifications:

  • Conductive type:        Si   n- type
  • Resistivity:                  1- 10 ohm-cm
  • Size:                          4" diameter +/- 0.5 mm  x 0.525 +/- 0.025 mm th
  • Orientation:                (100) +/- 0.5o
  • Polish:                        One  side  polished
  • Surface roughness:     Prime
  • Packing:                      Vacuum packed on a 4" single wafer carrier
  • Optional:  you may need tool below to handle the wafer ( click picture to order )

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