Browse Categories

Au( highly oriented polycrystalline)/Ti/ SiO2 on Si substrate ,4"x0.525 mm,1sp P-type B-doped, Au(111)=50 nm, Ti=2 nm ,SiO2=300nm

In stock
Item Number: SI-SO-Ti-Au(111) 101D05C1

Silicon Wafer Specifications:

  • Film:         Au/Ti/ SiO2 on Si substrate 
      • Au(111)=50 nm
      • Ti=2 nm
      • SiO2=300 nm
      • Si(100) P type B doped ~525 um Prime Grade
  • Resistivity:                  1-20 
  • Substrate Size:            4" diameter +/- 0.5 mm x 0.525 mm
  • Polish:                        one side polished
  • Surface roughness:      < 10 A RMS
  • Maximum Thermal Budget of Au film:  below 200 degree C

Related Products

Thin Films  A-Z

Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater

Shopping Cart
Your cart is empty.
Please clear the browsing history before ordering the product. Otherwise, availability and price are not guaranteed.
Mailing Lists
MTI sponsorships:
MTI Sponsors Thermoelectrics Workshop

MTI-UCSD Battery Fabrication Lab

MTI Sponsors the Postdoctoral Awards

Upcoming Shows:
AABC 2018 June 4-7 San Diego CA Booth 32

ICT 2018 July 1-5 Caen France

ICM 2018 July 16-20 San Francisco CA Booth 5

Recent Attended Shows:
233rd ECS Meeting May 13 - 17 Seattle WA

AeroMat 2018 May 7-10 Orlando FL

Ceramics Expo May 1-3 Cleveland OH

Click here to see our past conferences


1. Prices listed online are valid for US market and whom pay by credit card only. There will be extra charges for shipping & handling. Price various from country to country.
2. We may add extra charges for paper order and net30 terms due to extra labor cost.
3. The prices listed are subject to change without notice.