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Bi2Te3 Highly Oriented Crystal Substrate (001) 5x5x0.1 mm as Cleaved - BT-050501


Item Number: BT-050501

Quantity Discounts

QuantityAmount
5 to 9USD$323.10
10 to 20USD$305.15
Bismuth telluride crystal substrate is highly oriented crystal ( not  single crystal ), which is a narrow gap layered semiconductor with a hexagonal structure.  The valence and conduction band structure can be described as a many-ellipsoidal model with 6 constant-energy ellipsoids that are centered on the reflection planes.  General thermoelectric materials, thermoelectric factor is currently the largest pure-phase block; mechanical dissociation can get high-quality topological insulator material.
  
Specifications:
  • Structure:                      Hexagonal, group 166,R-3M
  • Lattice constant:           a=4.38A    c=30.5A
  • Substrate orientation:    highly oriented layer structure along <0001>
  • Surface:                        as Cleaved
  • Purity:                             99.999%, atomic ratio,
  • MeltingPoint:               585 oC
  • Resistivity :                  0.1-5 mohm. cm
  • Mobility :                     3000 cm2 / V.s 
  • General Size:               5 mm x 5 mm x 0.1mm,
  • Packing:                      packed in plastic bag with vacuum


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