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Bi2Te3 Highly Oriented Crystal Substrate (0001) irregular shape(about 10x10x0.1 mm) as Cleaved

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Item Number: BT-101001-US
Bismuth telluride crystal substrate is highly oriented crystal ( not single crystal ), which is a narrow gap layered semiconductor with a hexagonal structure.  The valence and conduction band structure can be described as a many-ellipsoidal model with 6 constant-energy ellipsoids that are centered on the reflection planes.  General thermoelectric materials, thermoelectric factor is currently the largest pure-phase block; mechanical dissociation can get high-quality topological insulator material.
  • Structure:                     Hexagonal, group 166,R-3M
  • Grown Method :            High-pressure vertical Bridgman
  • Lattice constant:           a=4.38A    c=30.5A
  • Substrate orientation:    highly oriented layer structure along <0001>
  • Surface:                       as Cleavaged
  • Purity:                         99.999%, atomic ratio
  • Melting Point:              585 oC
  • Resistivity :                 0.1-5 mohm. cm
  • Mobility :                     3000 cm2 / V.s 
  • General Size:            irregular  shape(~  10 mm x 10 mm x 0.1mm)
  • Packing:                      packed in plastic bag with vacuum

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