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CZ Crystal Grower System with Vacuum Chamber for Single Crystals upto 2100ºC - EQ-SKJ-50CZ-LD


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Item Number: EQ-SKJ-50CZ-LD
EQ-SKJ-50CZ is a high-quality Cubic Zirconia Crystal Growth Furnace for material research laboratories. This furnace has been proven to be excellent for pulling various crystals with up to melting point 2100 oC, including Sapphire, GGG, YAG, LaAlO3, Si, and Ge, etc. with up to diameter 3".  MTI provides technical training on installing and operating this furnace to customers before shipping. MTI also provides online video technical support worldwide.

SPECIFICATIONS:
Working Voltage 220V AC, 0.2-20 kHz, Three Phases
Working Current 100A
Max. Power Consumption 50 KW
Melting Temperature
  • Max: 2100°C (3812°F)
  • Accuracy: < +/- 0.2°C by Euro-thermal temperature controller
Max. Vacuum Level
  • 10-3 torr by mechanical pump (included)
  • 10-5 torr by diffusion pump (optional)
Vacuum Chamber Size
 

500mm(Dia.) x 700mm(H)

Water Cooling
  • Water flows through chamber jacket and crystal seed rod
  • Water Pressure: 0.13 - 0.18 MPa   
  • Water Flowrate: 60 L/minute
Controller Electronic operation unit for controls of pulling, rotating, temperature
Puller
 
  • Driven by constant torque DC motors
  • Pulling Rate: 0.1-20mm/h
  • Max. Seed Rod Travel Distance: 400mm
  • Rotating Rate: 0-40 RPM



Mechanical Pump




  • Ultimate Pressure:             6×10E-2 Pa
  • Pumping Speed:                8 L/S
  • Rate Speed:                      1420 r/min
  • Motor Power:                     1.1 kW
  • Power Voltage:                  AC 380V, Three Phases
  • Oil filling:                            ~1.8 L
  • Ultimate Temperature:       90 °C
  • Weight:                               ~53kg
  • Outline Size:                      560(L)×184(W)×306(H) mm


Diffusion Pump

  • Ultimate Pressure:                  ≤1.3×10E-4 Pa
  • Pumping Speed:                     ≥500 L/S
  • Max. Working Time:               1 hour (45 mins Pre-Heating Required)
  • Cooling Water Temperature:  20±5°C 
  • Cooling Water Flowrate:         ≥300L/S
  • Motor Power:                          1.8 kW
  • Power Voltage:                       AC 220V, Single Phase
  • Oil filling:                                 0.7 L
Crucible
  • Crucible Rod Raising Speed: Manual
  • Crucible Rod Max. Travel Distance: 100mm
  • Optional: Iridium Crucible and Refractory components are available upon request at extra cost.
Product Dimensions
  • Crystal Growing Controller: 880mm(L) x 1250mm(W) x 2640mm(H)
  • Control unit: 680mm(L) x 540mm(W) x 1700mm(H)
  • RF Power supply: 965(L) x 812mm(W) x 1219mm(H)
Warranty One year limited warranty with life time support
Compliance  MET Certification is available upon request  at extra cost
 
Demo Video
&
Operation Manual
         
Application Notes
  • MTI provides a free one-week technical training for two persons at our Hefei, China facility with free housing. The function of this equipment will be demonstrated to customer's full satisfaction before shipping it out
  • MTI grew many oxide crystals via this equipment, such as Sapphire, LaAlO3, LAST, SrLaAlO3, LiAlO3 ,etc. Technical transformation may be available at extra cost
  • Please click on the picture below for details on growing Ge single crystal using this furnace
                           
Melting raw materials         crystal seed in melt           Start pulling                 Sapphire boule grown     Ni Crystal grwn

Net Weight 2200 kg (4840 lbs)

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Notices
1. Prices listed online are valid for US market and whom pay by credit card only. There will be extra charges for shipping & handling. Price various from country to country.
2. We may add extra charges for paper order and net30 terms due to extra labor cost.
3. The prices listed are subject to change without notice.