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CZ Crystal Grower System with Vacuum Chamber for Oxide Single Crystals upto 2100ºC - EQ-SKJ-50CZ

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Item Number: EQ-SKJ-50CZ
EQ-SKJ-50CZ is a high quality Cubic Zirconia Crystal Growth Furnace for material research laboratories. This furnace has been proven to be excellent for pulling various oxide crystals with melting point up to 2100 oC, including Sapphire, GGG, YAG, LaAlO3, Si, and Ge, etc. with diameter up to 3".  MTI provides technical training on installing and operating this furance to customers before shipping. MTI also provides online video technical support worldwide.

SPECIFICATIONS:
Working Voltage 240V AC, 0.2-29 kHz, Three Phases
Working Current 100A
Max. Power Consumption 50 KW
Melting Temperature
  • Max: 2100°C (3812°F)
  • Accuracy: < +/- 0.2°C by Euro-thermo temperature controller
Max. Vacuum Level
  • 10-3 torr by mechanical pump (included)
  • 10-5 torr by diffusion pump (optional)
Vacuum Chamber Size
 


500mm(Dia.) x 700mm(H)
Water Cooling
  • Water flows through chamber jacket and crystal seed rod
  • Water Pressure: 0.13 - 0.18 MPa   
  • Water Flowrate: 60 L/minute
Controller Electronic operation unit for controls of pulling, rotating, temperature
Puller
 
  • Driven by constant torque DC motors
  • Pulling Rate: 0.1-20mm/h
  • Max. Seed Rod Travel Distance: 400mm
  • Rotating Rate: 0-40 RPM
Crucible
  • Crucible Rod Raising Speed: Manual
  • Crucible Rod Max. Travel Distance: 100mm
  • Optional: Iridium Crucible and Refractory components are available upon request at extra cost.
Product Dimensions
  • Crystal Growing Controller: 880mm(L) x 1250mm(W) x 2850mm(H)
  • Control unit: 680mm(L) x 540mm(W) x 1700mm(H)
  • RF Power supply: 800(L) x 500mm(W) x 1500mm(H)
Warranty One year limited warranty with life time support
Operation Manual  
Demo Video
Application Notes
  • MTI provides a free one-week technical training for two persons at our Hefei, China facility with free housing. The function of this equipment will be demonstrated to customer's full satisfaction before shipping it out
  • MTI grew many oxide crystals via this equipment, such as Sapphire, LaAlO3, LAST, SrLaAlO3, LiAlO3 ,etc. Technical transformation may be available at extra cost
  • Please click on the picture below for details on growing Ge single crystal using this furnace

Melting raw materials

Send crystal seed to melt

Start pulling after shoulder grown 

Sapphire crystal boule grown by the furnace
Net Weight 2200 kg (4840 lbs)

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Mailing Lists
Upcoming Shows:

ACS 2014 Spring, booth# 343, Aug 10-12, 2014, San Francisco CA, USA

Graphene World Summit 2014, Sep 15-16, 2014, Berkeley, CA, USA

MS&T 2014, booth# 420, Oct 12-16, 2014, Pittsburg, PA, USA


MRS Postdoctoral Award accepting nominations begining 6/15 to 8/31

Click here to see our past conferences

 

Notices
1. Prices listed online are valid for US market and who pay by credit card only. There will be extra charges for shipping & handling. Price various from country to country.
2. We may add extra charges for paper order and net30 terms due to extra labor cost.
3. The prices listed are subject to change without notice.