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4'' P-type Ge epi-film on N-type Silicon Wafer, 0.5 um thickness


In stock
Item Number: Ge(P)-on-Si(N)-101D05um-US

Specifications:

  • Silicon Wafer
    • Type:           N/ P doped
    • Orientation:  (100)
    • Size:           4'' dia
    • Thickness:   500 - 550 um
    • Grade:         Prime
    • Flates:         2 SEMI-STD on Axis 0 degree off
    • Backside:    Etch
    • Particles:     < 50 @ >0.20 um
  • Film: Ge epi-film 
    • Thickness:     0.5 um +/- 3%
    • Orientation:   (100)
    • Type:            P-type 
    • Dopant concentration: ~1E19 /cc
    • Current RMS spec: Ra < 2 nm



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