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Epi: Lattice matched N-type InGaAs:Si[100], on un-doped InP thickness: 1.0um(±20%).2"x0.35mm,1sp


In stock
Item Number: InGaAs:Si on InP- 50D035C1-US

2" dia. wafer InGaAs EPI on InP (100) by MOCVD deposition

Substrate:

  • InP Orientation: (100)
  • un-doped 
  • wafer Size: 2" diameter
  • Thickness:350+/- 25um
  • One side polished


EPI Film :

  • Lattice matched In/Ga alloy layer of N-type InGaAs:Si(100),
  • Thickness :1.0 um (+/- 20%)
  • One Side polished
  • Roughness of epi-layer is close to 1 mono-layer (ML)
  • One the back side we can expect some deposits and we can't guarantee the same quality (roughness) as in the case of active layer surface.

EPI ready surface and packing

Typical Properties

Dopant

Type

Carrier Concentration

( cm-3)

Mobility

( cm2/V.Sec)

Resistivity

( ohm-cm )

EPD

(cm-2)

Undoped

N

7.5-9.5  x1015

4300-4400

1.6E-1-4.5E-1

<5000

Sn

N

0.5 ~1.0 x1018

0.5 ~1.0 x1018

200 ~ 2400

1500 ~ 2000

0.001 ~ 0.002

0.0025~0.007

3~5 x104

Zn

P

0.8 ~ 2.0  x1018

2.5 ~ 4.0 x1018

2500 ~ 3500

1300 ~ 1600

0.0025 ~ 0.006

1~ 3 x104

Fe

Semi-Insulating

N/A

1550-1640

(2.1-2.7) x107

<5000

 

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Notices
1. Prices listed online are valid for US market and whom pay by credit card only. There will be extra charges for shipping & handling. Price various from country to country.
2. We may add extra charges for paper order and net30 terms due to extra labor cost.
3. The prices listed are subject to change without notice.