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Epi: Lattice matched N-type InGaAs:undoped, on S-doped InP 3"x0.65mm,1sp


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Item Number: InGaAs on InP- 76D065C1-US

3" dia. InP/InGaAs/InP EPI layers on InP (100) by MOCVD deposition

Substrate:

  • N-type S doped InP [100]±0.5°, Nc=~5E18/cc 
  • Wafer Size: 3" diameter
  • Thickness:650+/- 25um
  • One side polished, backside etched, US Flats  

EPI Layer 1:
1um thick InP film, n-type Si doped, Nc=~5E15/cc

EPI Layer 2: 3.0±0.5µm thick, lattice matched In0.53Ga0.47As film, n-type undoped, Nc=1E15-1E16/cc                        
EPI Layer 3(top): 1um thick InP film, n-type Si doped, Nc=1E15-1E16/cc

 

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