Browse Categories
Search

Epi: Lattice matched N-type InGaAs:undoped, on S-doped InP 3"x0.65mm,1sp


In stock
Item Number: InGaAs on InP- 76D065C1-US

3" dia. InP/InGaAs/InP EPI layers on InP (100) by MOCVD deposition

Substrate:

  • N-type S doped InP [100]±0.5°, Nc=~5E18/cc 
  • Wafer Size: 3" diameter
  • Thickness:650+/- 25um
  • One side polished, backside etched, US Flats  

EPI Layer 1:
1um thick InP film, n-type Si doped, Nc=~5E15/cc

EPI Layer 2: 3.0±0.5µm thick, lattice matched In0.53Ga0.47As film, n-type undoped, Nc=1E15-1E16/cc                        
EPI Layer 3(top): 1um thick InP film, n-type Si doped, Nc=1E15-1E16/cc

 

Related Products

Thin Films  A-Z

Crystal wafer A-Z

Plasma Cleaner

Wafer Containers

Dicing saw

Film Coater

Shopping Cart
Your cart is empty.
Please clear the browsing history before ordering the product. Otherwise, availability and price are not guaranteed.
Mailing Lists
MTI sponsors MTI-UCSD Battery Fabrication Lab:
MTI-UCSD Battery Fabrication Lab Opening


MTI sponsors MRS and ECS Postdoctoral Award:

MTI Sponsors the Postdoctoral Awards

Upcoming Shows:
BPS 2018 62nd Annual Meeting Biophysical Society Feb 17-21 San Francisco CA Booth 909

2018 SME Annual Conference & Expo Feb 25 - 28 Minneapolis, MN Booth 701

APS March Meeting 2018 Mar 5-9 Los Angeles CA Booth 123

TMS 2018 147th Annual Meeting Exhibition Mar 11-15 Phoenix AZ Booth 500

Recent Attended Shows:
2017 MRS Fall Meeting and Exhibit Nov 26 - Dec 1 Boston, MA

Click here to see our past conferences

 

Notices
1. Prices listed online are valid for US market and whom pay by credit card only. There will be extra charges for shipping & handling. Price various from country to country.
2. We may add extra charges for paper order and net30 terms due to extra labor cost.
3. The prices listed are subject to change without notice.