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2" dia. InAlAs EPI Film on InP (SI) (100) 2" dia x0.35mm,1sp , EPI layer :300nm thick, undoped In0.52Al0.48As


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Item Number: InAlAs on InP(SEMI) 50D035C1-US

2" dia. wafer InAlAs EPI on InP (Semi-insulating)(100) by MOCVD deposition

Substrate:

  • InP Orientation: (100)
  • Doped with Fe, Semi-Insulating
  • Wafer size: 2" diameter
  • Resistivity: >1x10^7 ohm.cm
  • EPD: <1x10^4 /cm^2


EPI Film :

  • Undoped  In0.52Al0.48As, Thickness :300nm
  • One side polished
  • Roughness N/A

 

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