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8.5" RF Plasma Cleaner / Etcher with Vacuum Pump. (12 Liter, 13.56 Mhz, 80W max. ) - EQ-PCE-8


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Item Number: EQ-PCE-8
Transported by LTL Freight (Truck)

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PCE-8 is a plasma cleaner or etching unit with 8.5 "Dia x 14“"Length quartz chamber and 0 - 80W variable RF power. It is designed to clean and remove nano-scale organic contamination on the substrate or wafer up to 8" using air, oxygen, or argon plasma.  The rate of organic removal is about 20 nm/min Maximum at high RF power. It is an excellent tool to pre-clean single crystal substrate before epitaxial film deposition to achieve the better quality.  If you do not have experience for plasma surface cleaning, please refer to the articles as the follows. It also can be used as plasma etcher at higher RF power.
  • McIntire, Theresa M., S. Rachelle Smalley, John T. Newberg, A. Scott Lea, John C. Hemminger, Barbara J. Finlayson-Pitts. "Substrate Changes Associated with the Chemistry of Self-Assembled Monolayers on Silicon." Langmuir (2006) 22(13): 5617-5624.
  • Sumner, Ann Louise, Erik J. Menke, Yael Dubowski, John T. Newberg,  etc. "The Nature of Water on Surfaces of Laboratory Systems and Implications for Heterogeneous Chemistry in the Troposphere." Phys. Chem. Chem. Phys. (2004) 6: 604-613.
  • Mennicke, Ulrike, Tim Salditt. "Preparation of Solid-Supported Lipid Bilayers by Spin-Coating." Langmuir (2002) 18: 8172-8177.
SPECIFICATIONS
Input Power
  • AC 220V , 50/60 Hz, 
  • PF Power:    80 W Max.    ( standard )   
  • Vacuum Pump:   normal 550W, start 750W
  • Total Power:    830W max. 
  • Working current  <= 3A
RF Power
  • RF power is adjustable within 0 - 80W
  • RF frequency:   13,56 MH
  • Optional:  300 W RF power supply is  available upon request at extra cost

Plasma Chamber
  • 8.5" O.D x 8.2" I.D x 14" L  high purity quartz chamber
  • Volume: 12 L
  • Hinged type front flange made of aluminum
  • 2.3" Dia. ( 60mm) quartz window for easy observation
  • Totally RF radiation shield with zero RF leaking
Control Panel

  • 6" color touch screen to control all parameters automatically  for plasma cleaning, such as vacuum level, gas flow rate, RF power level, and cleaning time.
  • Built in one channel Mass flow meter ( 0 - 500ml/minute) to control gas flow within +/- 0.5 ml/m
Vacuum Pump and Valve


Inert Gas
  • Many inert gases can be chosen for plasma cleaning such as N2, Ar, Air and mixed gas depended on what kind material will be treated. ( not included in the package)
  • No flammable gas shall be used for the plasma cleaner
Optional   
Overall Dimensions
  • 620 L ×600 W ×600 H, mm
  • 24" x 23.5" x 23.5"  ( inch )
Shipping Weight & Dimension
  • 350 lbs with vacuum pump
  • 48"x40"x37"
Warranty One year limited warranty with lifetime support ( no warranty for Pyrex glass chamber )



Operation Manual

    

Application Note
  • Please test the best plasma power based on your application by yourselves
    • For plasma cleaning,  usually keep RF power  between 10 - 30W depended on sample material to be cleaner.
    • For Plasma etching,   usually keep RF power between 35 - 80 W depended on sample material to be cleaner.
  • High power RF power supply is available upon request up to 300W at extra cost.

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Notices
1. Prices listed online are valid for US market and whom pay by credit card only. There will be extra charges for shipping & handling. Price various from country to country.
2. We may add extra charges for paper order and net30 terms due to extra labor cost.
3. The prices listed are subject to change without notice.