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SGGG - Gd2.6Ca0.4Ga4.1Mg0.25Zr0.65O12, (111), 10x10x0.5mm, 1sp - SGGG-Ca-c101005S1


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Item Number: SGGG-Ca-c101005S1

SGGG  single crystal, e.g. substituted gadolinium gallium garnet is grown by CZ method .  SGGG substrate is excellent for for growing bismuth-substituted iron garnet epitaxial films

  • Composition:   (Gd2.6Ca0.4)(Ga4.1Mg0.25Zr0.65O12
  • Size: 10 mm x 10 mm x 0.5 mm
  • Orientation: (111) +/-0.5°
  • Polish:   one side EPI polished 
  • Surface Roughness:   < 10A by AFM 5x5 microm area 

 

Physical Properties of GGG

Composition

(Gd2.6Ca0.4)(Ga4.1Mg0.25Zr0.65)O12

Crystal Structure

Cubic:   a =12.480 Å ,      

 Molecular wDielectric constanteight

968,096

Melt Point

~1730 oC        

 Density

~ 7.09   g/cm3  

Hardness

~ 7.5 ( mohns)

Refractive index

1.95

Dielectric constant

30

Dielectric loss tangent (10 GHz)

ca. 3.0 * 10_4

  Crystal Purity

> 99.99%

Crystal growth method

Czochralski

Crystal growth direction

<111>


Crystal  Color

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