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Thermal Oxide Wafer: 1000 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, Ptype , 1SP,R:1-10 ohm.cm

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Item Number: SI-SO-Ba100D05C1-1000nm

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25 to 100USD$85.45

Thermal oxide Layer

  • Research Grade , about 80 % useful  area
  • SiO2 layer on 4 Silicon wafer
  • Oxide layer thickness: 1000 nm   ( 10000A)  +/-10%
  • Growth method - Dry oxidizing at 1000oC
  • Refractive index - 1.455

  • Note:  customized oxide layer available upon request from 50 nm - 1000 nm

Silicon Wafer Specifications:


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