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Thermal Oxide Wafer: 1000 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, Ptype , 1SP,R:1-10 ohm.cm


In stock
Item Number: SI-SO-Ba100D05C1-1000nm-US

Quantity Discounts

QuantityAmount
10 to 19USD$85.45
20 to 49USD$80.95
50 to 100USD$76.45

Thermal oxide Layer

  • Research Grade , about 80 % useful  area
  • SiO2 layer on 4'' Silicon wafer
  • Oxide layer thickness: 1000 nm   ( 10000A)  +/-10%
  • Refractive index - 1.455
  • Note:  customized oxide layer available upon request from 50 nm - 1000 nm

Silicon Wafer Specifications:


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1. Prices listed online are valid for US market and whom pay by credit card only. There will be extra charges for shipping & handling. Price various from country to country.
2. We may add extra charges for paper order and net30 terms due to extra labor cost.
3. The prices listed are subject to change without notice.