Browse Categories
Search

Thermal Oxide Wafer: 1000 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, Ptype , 1SP,R:1-10 ohm.cm

Click to enlarge
In stock
Item Number: SI-SO-Ba100D05C1-1000nm

Quantity Discounts

QuantityAmount
5 to 19USD$85.45
20 to 49USD$80.96
50 to 100USD$76.46

Thermal oxide Layer

  • Research Grade , about 80 % useful  area
  • SiO2 layer on 4'' Silicon wafer
  • Oxide layer thickness: 1000 nm   ( 10000A)  +/-10%
  • Growth method - Dry oxidizing at 1000oC
  • Refractive index - 1.455

  • Note:  customized oxide layer available upon request from 50 nm - 1000 nm

Silicon Wafer Specifications:


Related Products

Thin Films  A-Z

Crystal wafer A-Z

Plasma Cleaner

Wafer Containers

Dicing saw

Film Coater

Shopping Cart
Your cart is empty.
Please clear the browsing history before ordering the product. Otherwise, availability and price are not guaranteed.
Mailing Lists
Upcoming Shows:

MS&T 2014, booth# 420, Oct 12-16, 2014, Pittsburg, PA, USA

Lithium Battery Power 2014, booth# 2, Nov 11-13, 2014. Washington, DC, USA


MRS Fall 2014, booth# 901, Dec 2-5, 2014, Boston, MA, USA


MRS Postdoctoral Award accepting nominations begining 6/15 to 8/31

Click here to see our past conferences

 

Notices
1. Prices listed online are valid for US market and whom pay by credit card only. There will be extra charges for shipping & handling. Price various from country to country.
2. We may add extra charges for paper order and net30 terms due to extra labor cost.
3. The prices listed are subject to change without notice.