Browse Categories
Search

Thermal Oxide Wafer: 1000 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, Ptype , 1SP,R:1-10 ohm.cm


In stock
Item Number: SI-SO-Ba100D05C1-1000nm-US

Quantity Discounts

QuantityAmount
10 to 19USD$85.45
20 to 49USD$80.95
50 to 100USD$76.45

Thermal oxide Layer

  • Research Grade , about 80 % useful  area
  • SiO2 layer on 4'' Silicon wafer
  • Oxide layer thickness: 1000 nm   ( 10000A)  +/-10%
  • Refractive index - 1.455
  • Note:  customized oxide layer available upon request from 50 nm - 1000 nm

Silicon Wafer Specifications:


Related Products

Thin Films  A-Z

Crystal wafer A-Z

Plasma Cleaner

Wafer Containers

Dicing saw

Film Coater

Shopping Cart
Your cart is empty.
Please clear the browsing history before ordering the product. Otherwise, availability and price are not guaranteed.
Mailing Lists
MTI sponsors MRS Postdoctoral Awards:
MRS Postdoctoral Awards Nomination
 

MRS Past Postdoctoral Award Recipients 


MTI sponsors ECS Battery Division Postdoctoral Associate Research Award 

ECS Battery Division Postdoctoral Awards Nomination 


Upcoming Shows:

253rd ACS National Meeting & Exposition Apr 2 - 6 San Francisco, CA Booth 1921

2017 MRS Spring Meeting & Exhibit Apr 17 - 21 Phoenix, AZ Booth 516

Ceramics Expo Apr 25 - 27 Cleveland, OH Booth 1242

231st ECS Meeting May 28 - June 2 New Orleans, LA Booth 312

Recent Attended Shows:

APS March Meeting 2017 March 13 - 16 New Orleans LA

TMS 2017 146th Annual Meeting & Exhibition Feb 26 - Mar 2, San Diego, CA

Click here to see our past conferences

 

Notices
1. Prices listed online are valid for US market and whom pay by credit card only. There will be extra charges for shipping & handling. Price various from country to country.
2. We may add extra charges for paper order and net30 terms due to extra labor cost.
3. The prices listed are subject to change without notice.