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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.5 um thick,


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Item Number: SI-SOS100DD046C2-0.5um-US
 
Silicon on sapphire (SOS) is a hetero-epitaxialprocess for integrated circuitmanufacturing that consists of a thin layer (typically thinner than 0.6 micrometres) of silicongrown on a sapphire (Al2O3) wafer. SOS is part of the Silicon on Insulator (SOI) family of CMOS technologies. SOS is primarily used in aerospace and militaryapplications because of its inherent resistance to radiation.
 
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SOS(Silicon on Sapphire) Wafers  (DSP-Double sides polished)  

Silicon EPI Layer:
  • Silicon Orientation: (100)
  • Type, Dopant:  Intrinsic type, undoped
  • Silicon Thickness: 0.5 um +/- 0.05 um 
  • Resistivity: > 100 ohm.cm
  • Micro-particle density ( for particles > 2 um) < 2/cm^2
    Surefuce Roughness: Ra: < 2.5 nm
Sapphire Wafer:
       
  • R plane -- (1-102)  with  single flat
    Purity:  99.996%
  • Wafer size:   100 mm  dia x 0.46 mm thickness 
  • Flat : One flat 32.5mm +/-2.5mm, at 45+/- 1 deg CCW from <C> on <R>
  • Front surface: Epi-polished (Ra < = 0.3 nm)
  • Back surface: Optical grade polish
  • TTV < 15 um, Bow < 20 um, Warp < 20 um, Flatness (TIR) < 12 um, with Laser Mark on wafer back-side, just below the Flat



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