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Silicon-on-Sapphire (11-02, R Plane ), 10mmx10mm x0.5mm,,1sp film: 0.6um thick


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Item Number: SI-SOS101005S1-0.6um
  
Silicon on sapphire (SOS) is a hetero-epitaxialprocess for integrated circuitmanufacturing that consists of a thin layer (typically thinner than 0.6 micrometres) of silicongrown on a sapphire (Al2O3) wafer. SOS is part of the Silicon on Insulator (SOI) family of CMOS technologies. SOS is primarily used in aerospace and military applications because of its inherent resistance to radiation.
 
 Silicon  EPI Layer:
  • Silicon Orientation: (100)
  • Type, Dopant:  Intrinsic type, undoped
  • Silicon Thickness: 0.6um +/- 0.06 um 
  • Resistivity: >100 ohm.cm
  • Silicon epi film on C plate sapphire is available upon request
Sapphire Wafer:
  • R plane -- (1-102)  with  single flat
  • Wafer size:   10mmx10mmx0.53 mm thickness 
  • Polished surface:   Wafer surface is one side EPI polished  ( 1sp) via a special CMP procedure. 
  • One side polished


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