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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.5mm,1sp, Film: 0.6 um thick,


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Item Number: SI-SOS100DD05C1-0.6um-US
 
Silicon on sapphire (SOS) is a hetero-epitaxialprocess for integrated circuitmanufacturing that consists of a thin layer (typically thinner than 0.6 micrometres) of silicongrown on a sapphire (Al2O3) wafer. SOS is part of the Silicon on Insulator (SOI) family of CMOS technologies. SOS is primarily used in aerospace and militaryapplications because of its inherent resistance to radiation.
 
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 Silicon  EPI Layer:
  • Silicon Orientation: (100)
  • Type, Dopant:  Intrinsic type, undoped
  • Silicon Thickness: 0.6um +/- 0.06 um 
  • Resistivity: >100 ohm.cm
  • Silicon epi film on C plate sapphire is available upon request
Sapphire Wafer:
  • R plane -- (1-102)  with  single flat
  • Wafer size:   100mm  dia x 0.53 mm thickness 
  • Orientation Flat Length: 32.5mm +/-2.5mm ,
  • Flatness:10um,    Parallelism:20um
  • Polished surface:   Wafer surface is EPI polished via a special CMP procedure. 
  • One side polished
  • Projected C-Axis: 45 degree +/- 2 degree
  • Backside Surface: fine ground and etched;  Roughness: Ground-64u" Ra


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