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SiC-3C Undoped Epi Film as CMP on both sides of Silicon (100) Wafer after epitaxy growth, 2.2 micron Thick, 10x10x0.525 mm

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Item Number: SiC-3CP-a-4-13-10100525-2.2


  • Film:  SiC Epi film with 3C structure grown by PECVD
    • Thickness:2200 nm +/- 10%  
    • Orientation: 3C SiC (100)
    • Surface:  CMP   ( film chemical mechanical polished ) on both sides with Ra < 5 Angstrom
    • Type and dopant:  N type, Undoped
    • Surface defects density (microscopic inspection of crystallites or other macro-defects) <= 3E3cm^2
    • TTV:   5-29 
    • Bow:  -9 ~ 3 
  • Silicon substrate:   
    • Size: 10x10 x 0.525 mm thickness 
    • Orientation:  (100)
    • Type:P type / B doped 
    • Resistivity:1- 10
    • Polish: Both sides optical  polished 

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