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4H-SiC Epitaxial Film on 4H-SiC, P type, 10x10x0.33mm, carrier conc. 1.4E17/cc, 2sp

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Item Number: 4HSiCFilm-P-1010033S2-US


  • 4H-SiC (0001)
  • Film target thickness:       4.3 microns  with  (thickness acceptation range) +/- 10%
  • Film target doping layer:    p 1E17/cc  with  (doping acceptation range)       +0% /- 30%
  • Conductive Type:            P type with 
  • Carrier concentration:        1.4E17 /cc   
  • Surface finish:                Both sides will be polished after deposition,   Both Front and Backside Epiwafer polishing with Ra or RMS < 5 Angstrom
  • 4H-SiC (0001) Prime grade
  • Off axis: miscut  8.0 +/- 0.5 degree
  • Prime Grade: with FWHM 20 arc second
  • OF orientation: parallel {10-10} +/- 5 degree
  • OF length: 15.9 +/- 1.7 mm
  • IF orientation: 90 degree cw. from OF +/- 5 degree
  • IF length:     8.0 +/- 1.7 mm
  • Diameter:   10x10mm
  • Thickness:   330 +/- 25 um
  • Resistivity:   < 0.03 ohm-cm
  • Edge exclusion: 1mm
  • Single side polished with Si-face CMP with average roughness: Ra < 0.2 RMS

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