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300 nm SiO2+50nm Si3N4 Films on Si (100), 2" dia x 0.250 mm t, P type , B-doped R:<0.01-0.1ohm.cm

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Item Number: SI-SO-Si3N4-Ba50D025C2m

Thermal oxide Layer

  • Research Grade , about 80 % useful  area
  • SiO2(300nm)+50nm Si3N4  layer on 2" Silicon wafer( Both sides)
  • Oxide layer thickness: 300 nm   ( 3000A)  +/-10%
  • Si3N4 thickness:50nm ( Both sides)
  • Growth method - Dry oxidizing at 1000oC
  • Refractive index - 1.455
  • Note:  customized oxide layer available upon request from 50 nm - 1000 nm

Silicon Wafer Specifications:

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