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SiO2+TiO2+Pt(111) thin film on Si substrate ,4"x0.525mm,1sp P-type B-doped, (SiO2=300nm,TiO2=20nm ,Pt(111)=150nm)

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Item Number: SI-SO-Pt(111) /TiO2-B-101D05C1

Silicon Wafer Specifications:

  • Film:         SiO2+TiO2+Pt(111) thin film on Si (100) (P-type) substrate ,4"x0.525mm,1sp
      • SiO2=300nm
      • TiO2=20nm
      • Pt(111)=150nm
  • Resistivity:                  1-20
  • Substrate Size:            4" diameter +/- 0.5 mm x 0.525 mm
  • Polish:                        one side polished
  • Surface roughness:      < 20 A RMS
  • Maximum Thermal Budget of Pt film: ~750 degree C / 1 hr
  • Optional:  you may need tool below to handle the wafer ( click picture to order )


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