Al2O3- Sapphire Wafer, C-plane (0001), 0.25"x0.25"x0.5mm, 1SP

Fearures:

• Sapphire substrate is the popular substrates for III-V nitrides,  superconductor and magnetic epi film due to less mis-matched lattice and stable chemical and physical properties. 
• Wafer size:   0.25" x 0.25" x 0.5 mm thick
• Orientation tolerance:  +/-0.5 Deg.  Please choose C, R, M, A plane orientation from " product option "
• Polished surface:   substrate surface is EPI polished via a special CMP procedure with RA < 8 A
• Please choose 1 or 2 sides polished from " product option "
• Package:    Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container.
• Precaution:   R plane sapphire wafer is easy to cleave compared with C plane's. Please handle it with a care

Typical Properties:

•  Crystal Structure:      Hexagonal. a=4.758 Angstroms c=12.99 Angstroms,
• Melting Point: 2040 degree C
• Density: 3.97 gram/cm² 
• Growth Technique: CZ
• crystal purity:             >99.99%
• Hardness:                   9 ( mohs)
• Thermal Expansion:    7.5x10^{-6 (}/ ^oC)
• Thermal Conductivity: 46.06 @ 0 ^oC     25.12 @ 100 ^oC,     12.56 @ 400 ^oC   ( W/(m.K) )
   
• Dielectric Constant: ~ 9.4 @300K  at A axis ~ 11.58@ 300K at C axis
• Loss Tangent at 10 GHz: < 2x10^-5  at A axis ,  <5 x10^-5  at C axis
•  Please click here for detail data