Al2O3- Sapphire Wafer, C-plane (0001), 3"Dia x0.5 mm, 1SP

• Sapphire ( single crystal of Al₂O₃ ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films. 

Orientation: C-axis[0001]( +-0.3^o) with Standard Flat

Diameter: 3" +/- 0.3mm

Thickness: 500um +/- 25 um

 Major Flat: A-axis[11-20]+/-0.2^o

Surface Finish: Front sides: Epi- polished Ra<0.5nm(by AFM)

TTV: < 10um

• Polished surface:   Two side epi polished by special CMP technology.
•  Package:    Each wafer is packed in 1000 class clean room .

Typical Properties:

•  Crystal Structure:      Hexagonal. a=4.758 Angstroms; c=12.99 Angstroms,
• Melting Point: 2040 degree C
• Density: 3.97 gram/cm² 
• Growth Technique: CZ
• crystal purity:             >99.99%
• Hardness:                   9 ( mohs)
• Thermal Expansion:    7.5x10^{-6 (}/ ^oC)
• Thermal Conductivity: 46.06 @ 0 ^oC     25.12 @ 100 ^oC,     12.56 @ 400 ^oC   ( W/(m.K) )
   
• Dielectric Constant: ~ 9.4 @300K  at A axis ~ 11.58@ 300K at C axis
• Loss Tangent at 10 GHz: < 2x10^-5  at A axis ,  <5 x10^-5  at C axis
•  Please click here for detail data