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Al2O3 - Sapphire Wafer, M plane, 10x10x1.0mm 2sp
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In stock
Item Number: ALM101010S2
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Specifications:
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Orientation: M <10-10> +/-0.5 o
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Wafer size: 10 mm x 10 mm x 1.0 mm thick
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Polished surface: two sides EPI polished via a special CMP procedure. Ra <5A
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Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer containernitrides, superconductor and magnetic epi film due to less mis-matched lattice and stable chemical and physical properties
Typical Properties:
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Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms,
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Melting Point: 2040 degree C
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Density: 3.97 gram/cm2
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Growth Technique: CZ
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crystal purity: >99.99%
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Hardness: 9 ( mohs)
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Thermal Expansion: 7.5x10-6 (/ oC)
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Thermal Conductivity: 46.06 @ 0 oC 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
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Dielectric Constant: ~~ 9.4 @300K at A axis ~~ 11.58@ 300K at C axis
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Loss Tangent at 10 GHz: < 2x10-5 at A axis , <5 x10-5 at C axis
 Please click here for detail data
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MS&T 2012, Booth# 536, Oct.9-10, 2012, Pittsburgh, PA, USA
 Nanotech 2012, Booth# 712, June 19-20, 2012, Santa Clara, California
 ECS 221st, Booth#208, May 7-9, 2012, Seattle,WA, USA
 SVC TechCon2012, Booth# 739, May 1- 2, 2012, Santa Clara, California
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Notices
1. The price listed on line is valid for US market and who pay by credit card only. There will be extra cost for shipping and handling. The price is different from country to country
2. We may add extra cost for paper order and net 30 term due to extra labor cost
3. The price is subject to change without notice
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