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AlN Epitaxial Template on 2" Silicon ( Epi-film on <111> Si, undoped N type ) 2"x 200 nm
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Item Number: AT.U.SI.050.000.111.NA.SSP.0200
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AllN Epitxial Template on Silicon is made by a hydride vapor phase epitaxy (HVPE)-based method. Epi AlN template on Silicon is a cost effective way to replace AlN single crystal substrate.
Specifications
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Nominal AlN thickness: 200nm ±10%, one side coated
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Front Surface: <1nm RMS, as-grown
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Back surface: silicon as received
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AlN orientation: (00.2)
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Macro Defect Density: <1/cm^2
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Wafer base: Silicon [111] N type, 2" dia x0.5 mm, res: 1~10 ohm-cm, one side polished
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MS&T 2012, Booth# 536, Oct.9-10, 2012, Pittsburgh, PA, USA
 Nanotech 2012, Booth# 712, June 19-20, 2012, Santa Clara, California
 ECS 221st, Booth#208, May 7-9, 2012, Seattle,WA, USA
 SVC TechCon2012, Booth# 739, May 1- 2, 2012, Santa Clara, California
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Notices
1. The price listed on line is valid for US market and who pay by credit card only. There will be extra cost for shipping and handling. The price is different from country to country
2. We may add extra cost for paper order and net 30 term due to extra labor cost
3. The price is subject to change without notice
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