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AlN Epitaxial Template on Sapphire (Epi-Film on Sapphire, undoped ) 10mmx10mmx1000nm
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Item Number: AN-AT-1010-U-1000-US
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AlN Epitxial Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. Epi AlN template is a cost effective way to replace AlN single crystal substrate.
Specifications
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Sizes 10mmx10mm
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Substrate Sapphire Orientation: c axis (0001) +/- 1.0 deg.
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Type and Doping: Undoped, Semi-insulating
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Macro Defect Density: <5 cm-2
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Front Surface Finish (Al Face): As-grown, Epi-ready
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Back Surface Finish Sapphire as-received finish
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Useable Surface Area >90%
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Edge Exclusion Area 1mm
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Package Single Wafer Container
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AlN layer thickness 1000 nm
Related data
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MS&T 2012, Booth# 536, Oct.9-10, 2012, Pittsburgh, PA, USA
 Nanotech 2012, Booth# 712, June 19-20, 2012, Santa Clara, California
 ECS 221st, Booth#208, May 7-9, 2012, Seattle,WA, USA
 SVC TechCon2012, Booth# 739, May 1- 2, 2012, Santa Clara, California
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Notices
1. The price listed on line is valid for US market and who pay by credit card only. There will be extra cost for shipping and handling. The price is different from country to country
2. We may add extra cost for paper order and net 30 term due to extra labor cost
3. The price is subject to change without notice
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