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AIN ceramic substrates are fabricated by tape casting technology. Its thermal conductivity is 4-5 times higher than Al2O3. It is an ideal substrate for electronic thick and thin film applications.
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Aluminum Nitride Ceramic Substrates Properties
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Item No.
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AN5113
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AN5116
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Purity (wt%)
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98%
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99%
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Density (g/cm3)
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>3.25
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>3.26
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Thermal Conductivity (W/m. K)
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100 - 300
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>170
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Thermal Expansion (x10-6/oC)
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<4.3
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<4.2
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Dielectric Strength (Kv/mm)
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>15
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>15
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Dielectric Constant (at 1MHZ)
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8.7
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8.7
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Loss Tangent (x104@1 MHz)
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3 - 7
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3 - 7
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Volume Resistivity (ohm-cm)
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>1014
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>1014
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Flexural Strength (Kgf/mm?)
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>25
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>30
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Substrate Specifications
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Max. Size 140 x 100mm, thickness 0.63 - 0.2 mm
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Surface Roughness ( micron)
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as fired 0.3 as lapped 0.075 as polished 0.025
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MS&T 2012, Booth# 536, Oct.9-10, 2012, Pittsburgh, PA, USA
 Nanotech 2012, Booth# 712, June 19-20, 2012, Santa Clara, California
 MRS 2012 Spring Meeting, Booth# 321, Apr. 10-12, 2012, San Francisco, CA , USA
 TMS 2012, Booth# 330, Mar. 12- 14, 2012, Orlando, FL, USA
 APS 2012, Booth#211, Feb.27-29, 2012, Boston, MA, USA
 AABC 2012, Booth #809, Feb 6-10, 2012,Orlando, FL, USA
 36th ICAE/ICACC 2012, Booth#214, Jan.24-25, 2012, Daytona Beach, FL, USA
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Notices
1. The price listed on line is valid for US market and who pay by credit card only. There will be extra cost for shipping and handling. The price is different from country to country
2. We may add extra cost for paper order and net 30 term due to extra labor cost
3. The price is subject to change without notice
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