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Home > Bandgap-semiconductor
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Constants,
Energy Gaps, and Physical Propertiesof Semiconductor related Crystals
Source: Sze, S.M., Physics of Semiconductor Device,
, Wiley Interscience Publication, 1981, pp. 848-849.
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Material System
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Element or Compound
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Name
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Structure1
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Lattice
Constant
(A) at 300 K
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Band Gap (ev) at 300 K
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Band2
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IV
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C
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Carbon (diamond)
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D
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3.56683
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5.47
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I
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Ge
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Germanium
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D
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5.64613
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0.66
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I
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Si
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Silicon
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D
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5.43095
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1.12
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I
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Sn
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Grey Tin
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D
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6.48920
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0.00
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D
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IV-IV
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SiC
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Silicon carbide
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W
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a = 3.086,
c= 15.117
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2.996
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I
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III-V
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AlAs
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Aluminum arsenide
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Z
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5.6605
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2.16
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I
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AlP
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Aluminum phosphide
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Z
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5.4510
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2.45
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AlSb
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Aluminum antimonide
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Z
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6.1355
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1.58
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I
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BN
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Boron nitride
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Z
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3.6150
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~7.5
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I
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BP
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Boron phosphide
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Z
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4.5380
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2.0
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GaAs
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Gallium arsenide
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Z
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5.6533
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1.42
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D
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GaN
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Gallium nitride
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W
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a = 3.189,
c = 5.185
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3.36
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GaP
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Gallium phosphide
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Z
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5.4512
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2.26
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I
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GaSb
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Gallium antimonide
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Z
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6.0959
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0.72
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D
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InAs
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Indium arsenide
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Z
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6.0584
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0.36
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D
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InP
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Indium phosphide
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Z
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5.8686
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1.35
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D
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InSb
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Indium antimonide
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Z
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6.4794
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0.17
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D
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II-VI
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CdS
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Cadmium sulfide
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Z
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5.8320
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2.42
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D
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CdS
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Cadmium sulfide
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W
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a = 4.16,
c = 6.756
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2.42
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D
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CdSe
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Cadmium selenide
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Z
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6.050
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1.70
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D
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CdTe
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Cadmium telluride
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Z
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6.482
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1.56
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D
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ZnO
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Zinc oxide
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R
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4.580
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3.35
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D
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ZnS
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Zinc sulfide
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Z
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5.420
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3.68
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D
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ZnS
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Zinc sulfide
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W
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a = 3.82,
c = 6.26
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3.68
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D
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ZnSe
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Zinc selenide
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Z
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5.668
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2.71
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D
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ZnTe
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Zinc telluride
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Z
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6.103
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2.393
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D
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IV-VI
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PbS
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Lead sulfide
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R
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5.9362
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0.41
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I
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PbSe
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Lead selenide
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R
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6.126
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0.27
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I
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PbTe
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Lead telluride
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R
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6.4620
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0.31
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I
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1. D = Diamond, W = Wurzite, Z = Zincblende, R = Rock Salt
2. I = Indirect, D = Direct
3. At ~ 2K.
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