Al2O3 - Sapphire Wafer 3" x0.5 mm , A plane (11-20), 1 SP

Al2O3 - Sapphire Wafer 3" x0.5 mm , A plane (11-20), 1 SP


Features:

  • A plane (1-120) sapphire wafer is being used extensively as a substrate for III-V nitrides and magnetic epitaxial films due to its better lattice mismatch
  • Wafer size: 3" dia x 0.5 mm thickness
  • Orientaion: A plane <11-20> orn.+/-0.5 Deg
  • Polished surface: Wafer surface is EPI polished via a special CMP procedure.
  • Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container.

Typical Properties:

  • Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms,
  • Melting Point: 2040 degree C
  • Density: 3.97 gram/cm2
  • Growth Technique: CZ
  • crystal purity: >99.99%
  • Hardness: 9 ( mohs)
  • Thermal Expansion: 7.5x10-6 (/ oC)
  • Thermal Conductivity: 46.06 @ 0 oC 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
  • Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
  • Loss Tangent at 10 GHz: < 2x10-5 at A axis , <5 x10-5 at C axis
Price: $350.00
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