Al2O3- Sapphire Wafer, C-plane (0001), 2"dia x 0.5mm 2SP

Al2O3- Sapphire Wafer, C-plane (0001), 2"dia x 0.5mm 2SP


  • Sapphire ( single crystal of Al2O3 ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films.
  • Wafer size: 2" dia x 0.4 - 0.5 mm thickness
  • (0001) C plane orientation +/-0.5 Deg
  • Polished surface: Wafer surface is EPI polished via a special CMP procedure. Two sides polished.
  • Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container.

Typical Properties:

  • Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms,
  • Melting Point: 2040 degree C
  • Density: 3.97 gram/cm2
  • Growth Technique: CZ
  • crystal purity: >99.99%
  • Hardness: 9 ( mohs)
  • Thermal Expansion: 7.5x10-6 (/ oC)
  • Thermal Conductivity: 46.06 @ 0 oC 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
  • Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
  • Loss Tangent at 10 GHz: < 2x10-5 at A axis , <5 x10-5 at C axis
Price: $89.00
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