Al2O3- Sapphire Wafer, C-plane (0001),10x10x0.5mm, 2 SP

Al2O3- Sapphire Wafer, C-plane (0001),10x10x0.5mm, 2 SP

Fearures:

Sapphire substrate is the popular substrates for III-V nitrides, superconductor and magnetic epi film due to less mis-matched lattice and stable chemical and physical properties.
Wafer size: 10 x 10 x 0.5 mm thick
Orientation : <0001> +/-0.5^o
Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 5 A
2 sides polished
Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container.
Quantity discount will be applied automatically before checkout

Typical Properties:

Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms,
Melting Point: 2040 degree C
Density: 3.97 gram/cm²
Growth Technique: CZ
crystal purity: >99.99%
Hardness: 9 ( mohs)
Thermal Expansion: 7.5x10^{-6 (}/ ^oC)
Thermal Conductivity: 46.06 @ 0 ^oC 25.12 @ 100 ^oC, 12.56 @ 400 ^oC ( W/(m.K) )
Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
Loss Tangent at 10 GHz: < 2x10^-5 at A axis , <5 x10^-5 at C axis

Price: $23.95
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