GaSb, (100), Te doped,, N-type, 2" dia x 0.5mm, 1sp

GaSb (100), Te doped, 2" wafer 1sp


High quality GaSb single crystal wafers for semiconductor industries. 

Size: 2" diameter x 0.5mm,

Orientation: (100)

Dopping: Te doped,

Conducting type: N-type.

Polish: one side polished.

Grown by a special LEC technique and has the lowest EPD ( <1000/cm2 ). 

We also provides high resistivity N and P type GaSb wafers.

  

Typical Properties

                Crystal Structure:                                 cubic a = 6.095 Å

                Density:                                                 5.619 g/cm3

                Melting point:                                        710 oC

                Thermal Expansion:                           6.1 x 10 -6 /oK

                Thermal conductivity:                          270 mW / cm.k   at 300K

Dopant

Type

Carrier Concentration

( cm-3)

Mobility

( cm2/V.Sec)

Resistivity

( ohm-cm )

EPD

(cm-2)

Undoped

P

1.0~2.0 x 1017

600 ~ 800

~0.1

<1000

Zn

P+

2.0~5.0 x 1018

300 ~ 500

~0.004

<1000

Te

N

2.0~6.0 x 1017

2500 ~ 3500

~0.05

<1000

High Resistivity

P or N

1.0~2.0 x 1016

460

~ 1.0

<1000

 
Price: $450.00
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 Other Items from GaSb

  GaSb Wafer (111), undoped, 2"x0.5 mm One side polished - GaSb Wafer (100), undoped, 2"x0.5 mm One side polished
  GaSb (100), Te doped, 3" wafer 1sp - GaSb, (100), Te doped,, N-type, 3" dia x 0.625mm, 1sp
  GaSb (100), Zn doped, 3" wafer 1sp - GaSb, (100), Zn doped,, P-type, 3" dia x 0.625mm, 1sp
  GaSb Wafer (100), undoped, 2"x0.5 mm One side polished - GaSb Wafer (100), undoped, 2"x0.5 mm One side polished
  GaSb (100), Te doped, 2" wafer 1sp - GaSb, (100), Te doped,, N-type, 2" dia x 0.5mm, 1sp
  GaSb (100), P-type, Si doped, 2" x 0.450 mm wafer, 1sp - GaSb, (100), Zn doped,, P-type, 2" dia x 0.5mm, 1sp

 
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