GaSb, (100), Te doped,, N-type, 3" dia x 0.625mm, 1sp

GaSb (100), Te doped, 3" wafer 1sp


High quality GaSb single crystal wafers for semiconductor industries.

Size: 3" (76.2+/-0.4 mm) diameter x 0.625+/-0.025mm,

Orientation: (100) +/- 0.5 o

Dopping: Te doped,

Conducting type: N-type.

Polish: one side polished.

Grown by a special LEC technique and has the lowest EPD ( <20000/cm2 ).

We also provides high resistivity N and P type GaSb wafers.

Typical Properties

Crystal Structure: cubic a = 6.095 ?o:p>

Density: 5.619 g/cm3

Melting point: 710 oC

Thermal Expansion: 6.1 x 10 -6 /oK

Thermal conductivity: 270 mW / cm.k at 300K

Dopant

Type

Carrier Concentration

( cm-3)

Mobility

( cm2/V.Sec)

Resistivity

( ohm-cm )

EPD

(cm-2)

Undoped

P

1.0~2.0 x 1017

600 ~ 800

~0.1

<1000

Zn

P+

2.0~5.0 x 1018

300 ~ 500

~0.004

<1000

Te

N

2.0~6.0 x 1017

2500 ~ 3500

~0.05

<1000

High Resistivity

P or N

1.0~2.0 x 1016

460

~ 1.0

<1000
Price: $650.00
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 Other Items from GaSb

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  GaSb (100), Te doped, 3" wafer 1sp - GaSb, (100), Te doped,, N-type, 3" dia x 0.625mm, 1sp
  GaSb (100), Zn doped, 3" wafer 1sp - GaSb, (100), Zn doped,, P-type, 3" dia x 0.625mm, 1sp
  GaSb Wafer (100), undoped, 2"x0.5 mm One side polished - GaSb Wafer (100), undoped, 2"x0.5 mm One side polished
  GaSb (100), Te doped, 2" wafer 1sp - GaSb, (100), Te doped,, N-type, 2" dia x 0.5mm, 1sp
  GaSb (100), P-type, Si doped, 2" x 0.450 mm wafer, 1sp - GaSb, (100), Zn doped,, P-type, 2" dia x 0.5mm, 1sp

 
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