Ge Wafer <111>. 2" dia x 0.5 mm, 2SP, P type ( Ga doped)

Ge Wafer <111>. 2" dia x 0.5 mm, 2SP, P type ( Ga doped)


Ge Wafer Specification

  • Growing Method: CZ
  • Orientation: (111) +/_0.5 Deg.
  • Wafer Size: 2" dia x 500 microns
  • Surface Polishing: Two sides epi polished
  • Surface roughness: < 8 A ( by AFM)
  • Doping: Ga Doped
  • Conductor type: P-type
  • Resistivity: 0.01~50 Ohms/cm
  • EPD: < 4x103/cm2
  • Package: under 1000 class clean room
  • For more data , please see the datasheet link

Typical Properties:

  • Structure: Cubic, a = 5.6754 A

  • Density: 5.765 g/cm3

  • Melting Point: 937.4 oC

  • Thermal Conductivity: 640

Price: $169.00
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