Ge Wafer <100>. Undoped, 4" dia x 0.5 mm, 1SP

Ge Wafer <100>. Undoped, 4" dia x 0.5 mm, 1SP


Ge Wafer Specification

  • Growing Method: CZ
  • Orientation: (100) +/_0.5 Deg.
  • Wafer Size: 4" dia x 500 microns
  • Surface Polishing: one side epi polished
  • Surface roughness: < 8 A ( by AFM)
  • Doping: Undoped
  • Conductor type: N-type
  • Resistivity: 10 - 65 Ohms/cm
  • EPD: < 4x103/cm2
  • Package: under 1000 class clean room
  • For more data , please see the datasheet link

Typical Properties of Ge Crystal

  • Structure: Cubic, a = 5.6754 A

  • Density: 5.765 g/cm3

  • Melting Point: 937.4 oC

  • Thermal Conductivity: 640

Price: $569.00
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  Ge Wafer <100>. 4" dia x 0.5 mm, 1SP, N type ( Sb doped) - Ge Wafer <100>. 4" dia x 0.5 mm, 1SP, N type ( Sb doped)
  Ge Wafer <100>. Undoped, 4" dia x 0.5 mm, 1SP - Ge Wafer <100>. Undoped, 4" dia x 0.5 mm, 1SP

 
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