• Single crystal ZnO
• N+ Type, In doped
• Size: 25.4 mm in dia x 0.3 mm
• Doping level: > 4E18 cm^-3
• Resistivity: 10^-1 to 10 ^-4 ohm-cm
• Orientation: (0001) +/-0.5^o
• Polish: double sides polished. ( please choose Zn or Oxygen face in product option)
• Surface roughness: < 5 A
• Packing: in 100 class plastic bag in 1000 class clean room

Typical Properties

Crystal Structure	Hexagonal: a= 3.252 A , c = 5.313 A
Growth Method	Melt
Hardness	4 moh scale
Density	~5.0 g/cm3
Melt Point	1975 oC
Band gap	3.37 eV
Specific heat	0.125 cal/gm
Conductivity	N type
Resistivity	0.04 ohm-cm +/- factor of 2 , N type
Thermal conductivity	0.006 cal/cm/ oK
Thermal expansion	2.90 x 10-6/oK
Dislocation Density	< 4 x 104 /cm2
Availability of Standard Substrate
Orientation	<0001>
Polished surface	EPI polished on one side or two sides to Ra < 10 Å
Standard Size	10x10 mm , 5 x 5 mm and Max. 1” diameter
Thickness	0.35 mm, 0.5 mm and 1.0 mm