Single crystal InAs, (100), undoped, N-type, 30mm dia x 0.5mm 1sp

InAs (100), undoped 30mm dia wafer 1sp


                        Growth method                                     LEC

                        Orientation                                            (100)  ± 0.5  Deg

                        Orientation Flat                                     <110>              

                        Doping                                                  Undoped

                        Conductivity type                                   N type

                        Carrier Concentration                            <3E16 / cm3

                        Mobility                                                >20000 cm2/V.S  

                        EPD                                                     <5E4 / cm 2

                        Standard thickness                                 500 ± 20 mm

                        Standard diameter                                 30 mm

                        Polish                                                   one-side

Price: $250.00
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