InSb (100) 2" dia x 0.45 mm, Ge doped , P type, 1 sided polished

InSb (100) 2" dia x 0.45 mm, Ge doped , P type, 1 sided polished


2" InSb wafer (P type, Ge doped )

  • Size: 2" dia x 0.45mm thick
  • Orientation: <100> +/-0.2 o
  • Polishing: one side polishd
  • Packing: Sealed in nitrogen in single wafer container at 1000 class clean room

Properties

  • Growth method LEC
  • Orientation (100) +/- 0.5 o
  • Orientation Flat N/A
  • Doping Ge
  • Conductivity type P type
  • Carrier Concentration (0.05-0.50)E18/cc
  • Mobility > (4.0-8.4)E3 cm2/Vs
  • EPD <200 / cm 2

Price: $419.00
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  InSb (100) 2" dia x 0.45 mm, Ge doped , P type, 1 sided polished - InSb (100) 2" dia x 0.45 mm, Ge doped , P type, 1 sided polished

 
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