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GGG, (111), 3" dia x0.5mm, 2sp

 

Single crystal GGG (111), 3" dia x0.5mm, 2sp
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LaAlO3, <100> Orn. 1" x 0.5mm wafer 1 SP

 

LaAlO3, <100> Orn. 1" x 0.5mm wafer 1 SP
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LaAlO3, <100>orn. 10x10x 0.5mm substrate , 1 side EPI polished

 

LaAlO3, <100>orn. 10x10x 0.5mm substrate , 1 side EPI polished
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LaAlO3, <100>orn. 10x10x 0.5mm substrate , 2 side EPI polished

 

LaAlO3, <100>orn. 10x10x 0.5mm substrate , 2 side EPI polished
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LaAlO3, <100>orn. 10x10x1.0 mm substrate , 1 side EPI polished

 

LaAlO3, <100>orn. 10x10x1.0 mm substrate , 1 side EPI polished
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LaAlO3, <100>orn. 10x10x1.0 mm substrate , 2 side EPI polished

 

LaAlO3, <100>orn. 10x10x1.0 mm substrate , 2 side EPI polished
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Si Substrate (100) orn, 10x10x0.6 mm, 1 sp, P type

 

Si Substrate (100) orn, 10x10x0.6 mm, 1 sp, P type
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100 g Si (99+%, <50 nm) Nanopowder - NP-Si-P50

 


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3 Pcs 4"Dia x 0.3 mmx0.5" arbor Impregnated Diamond Cutting Blades For Cutting Saw- IPDB40305

 

Three 4"Dia x 0.3 mm x 0.5" arbor Impregnated Diamond Cutting Blades For Low Speed Saw
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BaTiO3 <111> 5x5 x1.0 mm, 1SP , Substrate grade

 

BaTiO3 <111> 5x5 x 1.0 mm, 1SP Substrate grade
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BaTiO3 <111> 5x5 x1.0 mm, 2SP , Substrate grade

 

BaTiO3 <111> 5x5 x1.0 mm, 2SP , Substrate grade
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BaTiO3 <001> 5x5x1.0 mm, 1SP, Substrate grade

 

BaTiO3 <001> 5x5x1.0 mm, 1SP, Substrate grade
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BaTiO3 <001> 5x5x1.0 mm, 2SP, Substrate grade

 

BaTiO3 <001> 5x5x1.0 mm, 2SP, Substrate grade
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BaTiO3 <100> 5x5 x0.5 mm, 1SP Substrate grade

 

BaTiO3 <100> 5x5 x0.5 mm, 1SP Substrate grade
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BaTiO3 <100> 5x5 x0.5 mm, 2SP, Substrate grade

 

BaTiO3 <100> 5x5 x0.5 mm, 2SP, Substrate grade
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BaTiO3 <100> 5x5 x1.0 mm, 1SP Substrate grade

 

BaTiO3 <100> 5x5 x1.0 mm, 1SP Substrate grade
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BaTiO3 <100> 5x5 x1.0 mm, 2SP, Substrate grade

 

BaTiO3 <100> 5x5 x1.0 mm, 2SP, Substrate grade
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BaTiO3 <110> 5x5x1.0 mm, 1SP, Substrate grade

 

BaTiO3 <110> 5x5 x 1.0 mm, 1SP, Substrate grade
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BaTiO3 <110> 5x5x1.0 mm, 2SP, Substrate grade

 

BaTiO3 <110> 5x5 x 1.0 mm, 2SP, Substrate grade
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CdTe 10x10x0.5 mm, Random Orientation, 1 side polished

 

CdTe 10x10x0.5 mm, Random Orientation, 1 side polished
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Ce doped BaTiO3 <001> 5x5x1.0 mm, 1SP, Poled with single domain

 

Ce doped BaTiO3 <001> 5x5x1.0 mm, 1SP, Poled with single domain
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Diamond Wire of 0.25 mm Dia. x 100 Meter (333 feet) for Wire Saw Cutting -Made in USA - DW025x100

 

Diamond Wire of 0.25 mm Dia. x 100 Meter (333 feet) for Wire Saw Cutting -Made in USA
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GaAs (100) orientation, undoped, Semi-insulating, 2sp, 2" dia x 0.5mm

 

GaAs (100) orientation, undoped, Semi-insulating, 2sp, 2" dia x 0.5mm
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GaAs wafer, Zn doped Ptype, <100>, 2"x0.5 mm, 1sp

 

GaAs wafer, Zn doped Ptype, <100>, 2"x0.5 mm, 1sp
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GaP Wafer undoped (111) 2"x0.5 mm 2sp

 

Single crystal GaP wafer, undoped, (111) orientation, 2" dia x 0.5mm, 2sp
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GaP Wafer, undoped (111) 2"x0.5 mm, 1sp

 

Single crystal GaP wafer, undoped, (111) orientation, 2" dia x 0.5mm, 1sp
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GaSb Wafer (100), undoped, 2"x0.5 mm One side polished

 

GaSb Wafer (100), undoped, 2"x0.5 mm One side polished
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GaSb Wafer (111), undoped, 2"x0.5 mm One side polished

 

GaSb Wafer (100), undoped, 2"x0.5 mm One side polished
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Ge Wafer (110)/(110). N type, Sb doped, 2" dia x 0.5 mm, 1SP

 

Ge Wafer <110>. Undoped, 2" dia x 0.5 mm, 2SP
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Ge Wafer <110>. Undoped, 2" dia x 0.5 mm, 1SP

 

Ge Wafer <110>. Undoped, 2" dia x 0.5 mm, 2SP
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Ge Wafer <110>. Undoped, 2" dia x 0.5 mm, 1SP

 

Ge Wafer <110>. Undoped, 2" dia x 0.5 mm, 1SP
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Ge Wafer <110>. Undoped, 2" dia x 0.5 mm, 2SP

 

Ge Wafer <110>. Undoped, 2" dia x 0.5 mm, 2SP
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Ge Wafer <110>/<110>. N type, Sb doped, 2" dia x 0.5 mm, 2SP

 

Ge Wafer <110>. Undoped, 2" dia x 0.5 mm, 2SP
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Ge Wafer <111>. Undoped, 2" dia x 0.5 mm, 1SP

 

Ge Wafer <111>. Undoped, 2" dia x 0.5 mm, 1SP
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Ge Wafer <111>. Undoped, 2" dia x 0.5 mm, 1SP

 

Ge Wafer <111>. Undoped, 2" dia x 0.5 mm, 1SP
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Ge Wafer <111>. Undoped, 2" dia x 0.5 mm, 1SP

 

Ge Wafer <111>. Undoped, 2" dia x 0.5 mm, 1SP
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Ge Wafer <111>. Undoped, 2" dia x 0.5 mm, 2SP

 

Ge Wafer <111>. Undoped, 2" dia x 0.5 mm, 2SP
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Ge Wafer <111>. Undoped, 2" dia x 1.0 mm, 2SP

 

Ge Wafer <111>. Undoped, 2" dia x 1.0 mm, 2SP
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GSL1500-40X Compact Tube Furnace (42mm O.D. 1550 C Max) with SS Vacuum Flanges GSL1500-40X

 

GSL1500-40X Compact Tube Furnace (42mm O.D. 1550 C Max) with SS Vacuum Flanges GSL1500-40X
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High Precision & Ultra Fine Tweezers (5-SA)

 

High Precision & Ultra Fine Tweezers (5-SA)
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InAs (100), Undoped 2" dia x 0.40 mm, one side polished

 

InAs (100), Undoped 2" dia x 0.40 mm, one side polished
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InAs (100), Undoped 2" dia x 0.45 mm, two sides polished

 

InAs (100), Undoped 2" dia x 0.40 mm, one side polished
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InSb (100) 2" dia x 0.45 mm, Te doped, N type, 1 side polished

 

InSb (100) 2" dia x 0.45 mm, Te doped, N type, 1 side polished
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InSb (100) 2" dia x 0.45 mm, Undoped, N type, 1 side polished

 

InSb (100) 2" dia x 0.45 mm, one side polished, Undoped, N type
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KTaO3 (100) 5x5x0.5 mm, 2sp

 

Single crystal KTaO3, (100), 5mmx5mmx0.5mm, 2sp
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KTaO3, (100), 5 x5 x0.5mm, 1sp

 

Single crystal KTaO3, (100), 5mmx5mmx0.5mm, 1sp
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LaAlO3, <100> Orn. EPI ready 2" x 0.5mm wafer 1 SP --- Qty discounted!

 

single crystal LaAlO3 wafer, (100), 2" diax0.5mm, EPI ready for 1 SP
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LaAlO3, <100> orn. EPI ready 3" x 0.5mm wafer 1 SP --- MTI Special !!!

 

single crystal LaAlO3 wafer, (100), 3" diax0.5mm, 1sp, EPI ready
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LiNbO3 saw grade, X-cut, 10x10x0.5 mm, 1sp

 

Single crystal LiNbO3, saw grade, X-cut, 10x10x0.5mm, 1sp
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LSAT (100) 5x5 x0.5 mm Square Substrate --- 1 side epi polished

 

LSAT (100) 5x5 x0.5 mm Square Substrate --- 1 side epi polished
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