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YAlO3 (100) 10x10x0.5mm, 2 sides polished
YAlO3 (100) 10x10x0.5mm, 2 sides polished
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YSZ (100) 10x10 x0.5 mm Substrate , 1SP
YSZ (100) 10x10 mm Substrate , 1SP
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YSZ (100) 10x10x0.5 mm Substrate , 2SP
YSZ (100) 10x10 mm Substrate , 2SP
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YSZ Ceramic Substrate 10x10x0.5 mm , one side polished
YSZ Ceramic Substrate 10x10x0.5 mm , one side polished
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YVO4 (100) 10x10x0.5mm, 1sp
Single crystal YVO4 (100), 10x10x0.5mm, 1sp
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YVO4 (100) 10x10x0.5mm, 2sp
YVO4 can replace TiO2 substrate due to similar lattice constant
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YVO4 (110) 10x10x0.5mm, 1sp
Single crystal YVO4 (110), 10x10x0.5mm, 1sp
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YVO4 (111) 10x10x0.5mm, 1sp
Single crystal YVO4 (111), 10x10x0.5mm, 1sp
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Zirconia Crucible: 100x20x15mm Hi-Purity with 4000F Melting Point - CZ-L100W20H15
Zirconia Crucible: 100x20x15mm Hi-Purity with 4000F Melting Point
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ZnO (0001) 10x10x0.5mm, 1sp
Single crystal ZnO (0001), 10x10x0.5mm, 1sp
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ZnO (0001) 10x10x0.5mm, 2sp
Single crystal ZnO (0001), 10x10x0.5mm, 2sp
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ZnO (0001) 10x10x1.0 mm, 1sp
Single crystal ZnO (0001), 10x10x0.5mm, 1sp
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ZnO (0001) 10x10x1.0 mm, 2sp
Single crystal ZnO (0001), 10x10x0.5mm, 1sp
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ZnO (1-100) M-plane 10x10x0.5mm, 1sp
Single crystal ZnO (1-100) M-plane, 10x10x0.5mm, 1sp
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ZnO (1-100) M-plane 10x10x0.5mm, 2sp
Single crystal ZnO (1-100) M-plane, 10x10x0.5mm, 2sp
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ZnO (1-100) M-plane 5x5x0.5mm, 2sp
Single crystal ZnO (1-100) M-plane, 5x5x0.5mm, 2sp
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ZnO (11-20) A-plane 10x10x0.5mm, 1sp
Single crystal ZnO (11-20) A-plane, 10x10x0.5mm, 1sp
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ZnO (11-20) A-plane 10x10x0.5mm, 2sp
Single crystal ZnO (11-20) A-plane, 10x10x0.5mm, 2sp
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ZnO (11-20) A-plane 5x5x0.5mm, 1sp
Single crystal ZnO (11-20) A-plane, 5x5x0.5mm, 1sp
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ZnS (110) 10x10x1.0mm, 2sp
Single crystal ZnS (110), 10x10x1.0mm, 2sp
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ZnSe (001) 10x10x0.5mm, 1sp
Single crystal ZnSe (001), 10x10x0.5mm, 1sp
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ZnSe (001) 10x10x0.5mm, 2sp
Single crystal ZnSe (001), 10x10x0.5mm, 2sp
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ZnSe (001) 5x5x0.25mm, 2sp
ZnSe (001) 5x5x0.25mm, 2sp
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ZnTe (110) 10x10x1.0mm, 2sp
Single crystal ZnTe (110), 10x10x1.0mm, 2sp
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12" Poromeric Polishing Pad ( PSB) for final polishing
12" Poromeric Polishing Pad ( PSB) for Final Polishing of LiNbO3, Sapphire wafersa and All Single Crystal Substrates
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2" Die / IC Tray (1600 Pockets of 20x20x15 mil) - 20 pcs/Box
2" Die / IC Tray (1600 Pockets of 20x20x15 mil) - 20 pcs/Box
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24 T Desktop Hydraulic Pressing Machine with built in manual pump & protection cover - YLJ-24T
YLJ-24T, 24 T Desktop Hydraulic Pressing Machine with Built in Manual Pump & Protection Cover
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3" High Quality Nature Agate Mortar and Pestle - OP MTA-3
3" Beautiful Translucent Agate Mortar and Pestle for Your Lab
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40T Desktop Electric Hydraulic Pressing Machine with protection cover - YLJ-40TA
YLJ-40TA, 40T Desktop Electric Hydraulic Pressing Machine
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Al Metallic Substrate: (110), 10x10x1.0 mm, 1side polished
Al Metallic Substrate: (110), 10x10x1.0 mm, 1side polished
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Al2O3- Sapphire Wafe, R Plane 2" dia x 0.5mm one side EPI/ back side 80/50
Al2O3- Sapphire Wafe, R Plane 2" dia x 0.5mm one side EPI/ back side 80/50
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Bench top Transparent GLOVE BOX - EQ-GB-360
Benchtop GLOVE CHAMBER
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Ce doped BaTiO3 <100> 10x10x1.0 mm, 2SP, Poled with single domain
Ce doped BaTiO3 <100> 10x10x1.0 mm, 2SP, Poled with single domain
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Computerized 8 Channels Battery Analyzer (0.002-1mA, upto 5V) for R&D Energy Sorage Maerials - EQ-BST8-WA
Computerized 8 Channels Battery Analyzer (0.002 - 1mA, upto 5V ) for R&D all Rechargeable Cells & Electrodes- EQ-BST8-3
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Desktop Stainless Steel Vacuum Glove Box ( 24x 20 x 26") with Airlock Chamber and Gauges - EQ-GB-VGB-1
Desktop Stainless Steel Vacuum Glove Box ( 24x 20 x 26") with Airlock Chamber and Gauges - EQ-GB-VGB-1
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Diamond Compund Polishing Paste, 0.25 Micron, 10 gram sryinge
Diamond Compund Polishing Paste, 0.25 Micron, 10 gram sryinge
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Diamond Wire of 0.25 mm Dia. x 200 m L ( 666 feet) for Wire Saw Cutting -Made in USA - DW025x200
Diamond Wire of 0.25 mm Dia. x 200 m L ( 666 feet) for Wire Saw Cutting
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Digital Multi-Meter - A830L --- Must have for DIY. Free gift with order over $3000
Free gift with order over $3000
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GaAs (100) orientation, Zn doped, P-type, 2sp, 2" dia x 0.5mm
GaAs (100) orientation, Zn doped, P-type, 2sp, 2" dia x 0.5mm
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GaN -Single Crystal Substrate (0001), 10x10x0.475 mm , N- type, 1SP
GaN -Single Crystal Substrate (0001), 10x10x0.475 mm , N- type, 1SP
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GaP Wafer, S doped (111) 2"x0.5 mm, 2sp
Single crystal GaP wafer, S doped, (111) orientation, 2" dia x 0.5mm, 2sp
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Ge Substrate 10x10x 0.5 mm, <100> 1 SP, Undoped .
Ge Substrate 10x10x 0.5 mm, <100> 1 SP, Undoped .
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Ge Wafer <100>. 2" dia x 0.4 mm, 1SP, P type ( Ga doped), resistivity: 0.05~0.1 ohm-cm
Ge Wafer <100>. 2" dia x 0.5 mm, 1SP, P type ( Ga doped)
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Ge Wafer <100>. 2" dia x 0.4 mm, 1SP, P type ( Ga doped), resistivity: 0.3 ~0.4 ohm-cm
Ge Wafer <100>. 2" dia x 0.4 mm, 1SP, P type ( Ga doped)
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Ge Wafer <100>. 2" dia x 0.5 mm, 1SP, P type ( Ga doped), resistivity: 0.05~0.1 ohm-cm
Ge Wafer <100>. 2" dia x 0.5 mm, 1SP, P type ( Ga doped)
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Ge Wafer <100>. 2" dia x 0.5 mm, 1SP, P type ( Ga doped), resistivity: 0.3 ~0.4 ohm-cm
Ge Wafer <100>. 2" dia x 0.5 mm, 1SP, P type ( Ga doped)
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Ge Wafer <100>. 2" dia x 0.5 mm, 1SP, P type ( Ga doped), resistivity: 0.3~3.0 ohm-cm
Ge Wafer <100>. 2" dia x 0.5 mm, 1SP, P type ( Ga doped)
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Ge Wafer <100>. 4" dia x 0.5 mm, 1SP, P type ( Ga doped)
Ge Wafer <100>. 4" dia x 0.5 mm, 1SP, P type ( Ga doped)
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Ge Wafer <100>. 9 deg. miscut along <110>, 2" dia x 0.35 mm, 1SP, P type ( Ga doped), resistivities: 0.27~0.32 ohm-cm
Ge Wafer <100>. 9 deg. miscut along <110> , 2" dia x 0.35 mm, 1SP, P type ( Ga doped)
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Ge Wafer <100>/<110>. 2" dia x 0.35 mm, 1SP, P type ( Ga doped), resistivity: 0.3 ~0.4 ohm-cm
Ge Wafer <100>. 2" dia x 0.5 mm, 1SP, P type ( Ga doped)
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