LaAlO₃ single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for epitaxial growth of high Tc superconductors , magnetic and ferro-electric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications.

Specifications

Wafer Size: 10 x 10 mm x 1.0 mm thickness +/-0.05 mm,

Wafer Orientation: (100) +/-0.5 Deg

Polishing: one side CMP polished with free sub-surface damaged.

Surface Roughness: < 5 A

Packed Under 1000 class clean room. (EPI ready) and in 100 grade plastic bog in a wafer continaer.

	Typical Physical Properties
Crystal Structure	Rhombohedral at 25 oC: a=5.357 Angstroms c= 13.22 Angstroms Cubic at > 435 oC : a=3.821 Angstroms
Growth Method	Czochralski
Density	6.52 g/cm3
Melt Point	2080 oC
Thermal expansion	10 (x10-6/ oC)
Dielectric Constant	~ 25
Loss Tangent at 10 GHz	~3x10-4 @ 300K , ~0.6 x10-4 @77K
Color and Appearance	Tan to Brown based on annealing condition Visible twins on polished substrate.
Chemical Stability	Insoluble in mineral acids at 25 oC and soluble in H3PO3 at> 150 oC