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Diamond on Oxide (DOI) Wafer, 4", 2 um Thick, 10 nm Ra

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Item Number: DOI-01-4-10-US5


  • Wafer Size: 4" diameter  x 0.5mm
  • Si wafer Orientation: (100) + / - 0.5o
  • Insulating Layer:  SiO2
  • Diamond film thickness: 2 microns,undoped, non-conductive
  • Oxide Layer: 1 micron
  • Estimated Resistivity:     ~ 10E5 ohm-cm
  • Surface Roughness:   as grown ,  RA < 10 nm
  •  Package: One 1000 class clean room with 100 class plastic bag

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