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Diamond on Oxide Wafer, 10x10mm, 2um Thick, 10nm Ra

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Item Number: DOI-01-1010-10-US


  • Wafer Size: 10x10mm
  • Si wafer Orientation: (100) + / - 0.5o
  • Insulating Layer:  SiO2
  • Diamond film thickness:  2 microns, undoped
  • Oxide Layer: 1 micron
  • Estimated Resistivity: ~ 10E5 ohm-cm
  • Surface Roughness:   as grown ,  RA < 10 nm
  •  Package: One 1000 class clean room with 100 class plastic bag

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