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Graphene film on Ni/SiO2/Si 100mm dia,


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Item Number: CVD GON-100D-US

 Graphene™ films are grown directly on a Ni/SiO2/Si deposited on an oxidized silicon wafer usinga CVD process.

Specifications:    Research Grade , about 90 % useful  area

  • Wafer Size: 100 mm  diameter
  • Growth Method:Chemical Vapor Deposition (CVD) Technique 
  •  Film thickness:   1-10 monolayer  thick
      • Graphene film is multilayer with thickness varying in the range 1-10 layers;
      • Graphene layers are aligned relative to each (graphite-like A-B stacking ) other as indicated by the Raman spectrum
      • The graphene is grown on Ni film by CVD process.
      • Nickel film is deposited on the substrate covered by thermally grown oxide layer
      • Thickness of the Ni layer is 400 nm;
      • The thickness of the silicon oxide layer is 500 nm;
      • The thickness of the wafer is 500 μm
      • The crystallographic orientation of silicon is 100;
  • films are continuous with low  defect density.
  •  Atomically thin carbon film ( 1-10 layer )
  • Outstanding electronic properties
  •  Chemical inertness and stability
  •  Unprecedented mechanical strength
Graphene film structure: three film
graphene film thickness varis from 1 - 10 layer carbon
 
Optical microstructure picture
Ramam Spectrum

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