Browse Categories

Gallium nitride substrates are matched in lattice constant and thermal expansion properties for epitaxial growth of doped GaN layers needed for fabrication of GaN-based devices. This eliminates stress and defects induced by growing GaN epi-layers on non-nitride substrates such as sapphire or silicon carbide, which increase device fabrication complexity and cost and compromise device performance. MTI currently offers GaN substrates to fill the needs of many applications. Detailed product descriptions and specification sheets are listed below and you can order from the secure on-line system.  If you have any further questions, please contact us at 1-888-525-3070 or email to Our engineers will assist you immediately.

GaN Single Crystal
GaN Template on Sapphire

Shopping Cart
Your cart is empty.
Please clear the browsing history before ordering the product. Otherwise, availability and price are not guaranteed.
Mailing Lists
MTI sponsorships:
MTI Sponsors Thermoelectrics Workshop

MTI-UCSD Battery Fabrication Lab

MTI Sponsors the Postdoctoral Awards

Upcoming Shows:
35th International Annual Battery Seminar & Exhibit Mar 26 - 29 Fort Lauderdale FL Booth 232

2018 MRS Spring Meeting Exhibit April 2 - 6 Phoenix AZ Booth 607

Ceramics Expo May 1 - 3 Cleveland OH Booth 646

Recent Attended Shows:
TMS 2018 1147th Annual Meeting Exhibition Mar 11 - 15 Phoenix AZ

APS March Meeting 2018 Mar 5 - 9 Los Angeles CA

2018 SME Annual Conference & Expo Feb 25 - 28 Minneapolis, MN

Click here to see our past conferences


1. Prices listed online are valid for US market and whom pay by credit card only. There will be extra charges for shipping & handling. Price various from country to country.
2. We may add extra charges for paper order and net30 terms due to extra labor cost.
3. The prices listed are subject to change without notice.