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Al(0.1)Ga(0.9)N Epitaxial Template on Sapphire (C plane), P- type, , 2"diameter,Al(0.1)Ga(0.9)N thickness:200nm+/- 20nm, Production Grade


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Item Number: Al(0.1)Ga(0.9)NTmg50D(C-plane)-US

Al(0.1)Ga(0.9)N Epitaxial Template on Sapphire (C plane), P- type,doping ,~5x10^17,  , 2"diameter,Norminal Al(0.1)Ga(0.9)N thickness:200nm+/- 20nm, Production Grade

Specifications

  • Sizes 2” Round
  • Al(0.1)Ga(0.9)N thickness: 200nm+/- 20nm
  • Substrate Sapphire,  Orientation c-axis (0001) +/- 1.0 o
  • Conduction Type: P-type,
  • Sapphire/GaN:Nid/GaN:Mg
  • Front Surface Finish (Ga Face) As-grown
  •  Back Surface Finish Sapphire as-received finish
  •  Useable Surface Area >90% 
  •  Edge Exclusion Area 1mm
  •  Package Single Wafer Container
     
    Production Grade (For the detailed data, please click here)

 Related data

 

 

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