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GaN Epitaxial Template on 2" Silicon Wafer, GaN film, N type, undoped on Si (111) substrates, 2"x 500 nm, 2sp
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Item Number: GaNT50D-C2 (SIc)-US
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-GaN Epitxial Template on silicon is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. Epi GaN template on silicon is a cost effective way to replace GaN single crystal substrate.
Specifications:
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Nominal GaN thickness: 0.5μm ± 0.1 μm
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Front Surface finish (Ga-face): <1nm RMS, As-grown, Epi-ready
- Back surface finish: Silicon as received
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GaN orientation: C-plane (00.1)
- Polarity: Ga-face
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Conduction Type: Undoped (N-)
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Macro Defect Density: <1/cm^2
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Wafer base: Silicon [111], 2" diameter x 0.5mm, both sides polished
Related data
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MS&T 2012, Booth# 536, Oct.9-10, 2012, Pittsburgh, PA, USA
 Nanotech 2012, Booth# 712, June 19-20, 2012, Santa Clara, California
 ECS 221st, Booth#208, May 7-9, 2012, Seattle,WA, USA
 SVC TechCon2012, Booth# 739, May 1- 2, 2012, Santa Clara, California
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Notices
1. The price listed on line is valid for US market and who pay by credit card only. There will be extra cost for shipping and handling. The price is different from country to country
2. We may add extra cost for paper order and net 30 term due to extra labor cost
3. The price is subject to change without notice
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