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GaN Epitaxial Template on Sapphire, M plane ( Epi-Film on Sapphire, N type ) 10 x 10 mm x 5 micron
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Item Number: GaNTM101005S1
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GaN Epitxial Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. Epi GaN template is a cost effective way to replace GaN single crystal substrate
Specifications
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Sizes 10mmx10mm
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Substrate Sapphire, Orientation M (00.1) +/- 1.0 o
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Conduction Type: n-type,
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Resistivity < 0.5 Ohm-cm
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Front Surface Finish (Ga Face) As-grown
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Back Surface Finish Sapphire as-received finish
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Useable Surface Area >90%
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Edge Exclusion Area 1mm
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Package Single Wafer Container
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GaN layer thickness 5 microns , (=/- 10%)
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MS&T 2012, Booth# 536, Oct.9-10, 2012, Pittsburgh, PA, USA
 Nanotech 2012, Booth# 712, June 19-20, 2012, Santa Clara, California
 ECS 221st, Booth#208, May 7-9, 2012, Seattle,WA, USA
 SVC TechCon2012, Booth# 739, May 1- 2, 2012, Santa Clara, California
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Notices
1. The price listed on line is valid for US market and who pay by credit card only. There will be extra cost for shipping and handling. The price is different from country to country
2. We may add extra cost for paper order and net 30 term due to extra labor cost
3. The price is subject to change without notice
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