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InP (100) undoped, 2" x0.5mm, wafer, 2sp

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Item Number: IPUa50D05C2

InP single crystal wafer
Orientation: (100)
Size: 2" diameter x 0.5mm
Doping: undoped
Conducting type: N-type
Polish: two sides polished

Typical Properties

Dopant

Type

Carrier Concentration

( cm-3)

Mobility

( cm2/V.Sec)

Resistivity

( ohm-cm )

EPD

(cm-2)

Undoped

N

0.8 ~ 2.0  x1015

3600 ~ 4000

0.03 ~ 0.2

5~6 x104

Sn

N

0.5 ~1.0 x1018

0.5 ~1.0 x1018

200 ~ 2400

1500 ~ 2000

0.001 ~ 0.002

0.0025~0.007

3~5 x104

Zn

P

0.8 ~ 2.0  x1018

2.5 ~ 4.0 x1018

2500 ~ 3500

1300 ~ 1600

0.0025 ~ 0.006

1~ 3 x104

Fe

Semi-Insulating

0.1 ~ 1.0

2000

107 ~ 108

4~ 5 x104

 

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Mailing Lists

MS&T 2012, Booth# 536, Oct.9-10, 2012, Pittsburgh, PA, USA

Nanotech 2012, Booth# 712, June 19-20, 2012, Santa Clara, California
ECS 221st, Booth#208, May 7-9, 2012, Seattle,WA, USA
SVC TechCon2012, Booth# 739, May 1- 2, 2012, Santa Clara, California





 
 
 
Notices
1. The price listed on line is valid for US market  and who pay by credit card only. There will be extra cost for shipping and handling. The price is different from country to country
2. We may add extra cost for paper order and net 30 term due to extra labor cost
3. The price is subject to change without notice