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InP ,Growing Method: VGF(100) Zn doped,3 " x 0.625mm, wafer, 1sp
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Click to enlarge
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In stock
Item Number: IPZna76D06C1
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InP single crystal wafer
Orientation: (100)
Size: 3" diameter x 0.625 mm
Growing Method: VGF
Doping: Zn doped
Conducting type: S-C
Polish: one side polished
Resistivity:(3.1-3.7)E-2 ohm.cm
Mobility: 62-65 cmE2/V.S
EPD:<5000 /cmE2Carrier
Concerntration:(2.6-3.2)E+18 /cmE-3
Ra(Average Roughness) : < 0.4 nm
EPI ready surface and packing
Typical Properties
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Dopant
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Type
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Carrier Concentration
( cm-3)
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Mobility
( cm2/V.Sec)
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Resistivity
( ohm-cm )
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EPD
(cm-2)
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Undoped
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N
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0.8 ~ 2.0 x1015
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3600 ~ 4000
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0.03 ~ 0.2
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5~6 x104
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Sn
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N
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0.5 ~1.0 x1018
0.5 ~1.0 x1018
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200 ~ 2400
1500 ~ 2000
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0.001 ~ 0.002
0.0025~0.007
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3~5 x104
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Zn
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P
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0.8 ~ 2.0 x1018
2.5 ~ 4.0 x1018
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2500 ~ 3500
1300 ~ 1600
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0.0025 ~ 0.006
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1~ 3 x104
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Fe
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Semi-Insulating
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0.1 ~ 1.0
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2000
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107 ~ 108
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4~ 5 x104
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MS&T 2012, Booth# 536, Oct.9-10, 2012, Pittsburgh, PA, USA
 Nanotech 2012, Booth# 712, June 19-20, 2012, Santa Clara, California
 ECS 221st, Booth#208, May 7-9, 2012, Seattle,WA, USA
 SVC TechCon2012, Booth# 739, May 1- 2, 2012, Santa Clara, California
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Notices
1. The price listed on line is valid for US market and who pay by credit card only. There will be extra cost for shipping and handling. The price is different from country to country
2. We may add extra cost for paper order and net 30 term due to extra labor cost
3. The price is subject to change without notice
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